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November 1999
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench TM MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
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6.2 A, 20 V. R DS(on) = 0.024 ? @ V GS = 4.5 V
R DS(on) = 0.032 ? @ V GS = 2.5 V
Fast switching speed.
Low gate charge (10.5nC typical).
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
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DC/DC converter
Load switch
Battery Protection
than standard SO-8); low profile (1mm thick).
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A = 25 ° C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
FDC637AN
20
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
6.2
A
Drain Current
- Pulsed
20
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7 ’’
Tape Width
8mm
Quantity
3000 units
? 1999 Fairchild Semiconductor Corporation
FDC637AN, Rev. C
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相关代理商/技术参数
FDC637AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6
FDC637AN_F095 功能描述:MOSFET 2.5V N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC637BNZ 功能描述:MOSFET 20V N-Channel 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC638 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC638APZ 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC638H 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述:
FDC638P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC638P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6